This article is cited in 1 paper

Surface, interfaces, thin films

Profiling mobility components near the heterointerfaces of thin silicon films

E. G. Zaytseva, O. Naumova, B. I. Fomin

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: In this paper, we proposed the method for profiling of the components of the effective mobility of charge carriers $\mu_{\operatorname{eff}}$ defined by their scattering by surface phonons and by roughness at the film/insulator interfaces. The method is based on the controlled localization of charge carriers relative to the interface under study due to the coupling effect. The proposed method allows us to independently determine mobility components near different interfaces of films. The use of the proposed method for studying the mobility has allowed us to obtain information on the roughness of the interface and on the structural quality of the ultrathin (1–3-nm) layer of Si near the Si/buried oxide interface.

Keywords: thin films, silicon-on-insulator, mobility, characterization.

Received: 26.09.2019
Revised: 15.10.2019
Accepted: 15.10.2019

DOI: 10.21883/FTP.2020.02.48891.9272

 English version: Semiconductors, 2020, 54:2, 176–180

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