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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2020 Volume 54, Issue 3, Pages 275–279 (Mi phts5264)

This article is cited in 2 papers

Semiconductor physics

Double avalanche injection in diode avalanche sharpeners

M. S. Ivanov, N. I. Podolska, P. B. Rodin

Ioffe Institute, St. Petersburg

Abstract: Numerical simulations of picosecond-range avalanche sharpening diodes commutating fast-rising high-voltage pulses of submicrosecond duration is performed. It is demonstrated that the maximum duration of the commutated pulse is limited by physical phenomena related to the structure transition to the double avalanche injection mode but not by the drift extraction of nonequilibrium electron-hole plasma. Double avalanche injection is in principle capable of supporting the diode structure in the conducting state after switching. However, negative differential conductivity that is attributed to the double injection mode cause transverse instability of uniform current flow and isothermal current filamentation.

Keywords: impact ionization, subnanosecond switches, avalanche injection, current instabilities.

Received: 14.10.2019
Revised: 22.10.2019
Accepted: 22.10.2019

DOI: 10.21883/FTP.2020.03.49032.9284


 English version:
Semiconductors, 2020, 54:3, 345–349

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© Steklov Math. Inst. of RAS, 2026