Electronic properties of semiconductors

Heating of electrons in pure Ge in a quantum magnetic field upon the thermal excitation of charge carriers

V. F. Bannaya^a, E. V. Nikitina<sup>b

a</sup> Moscow State University of Education
^b Peoples' Friendship University of Russia, Moscow

Abstract: The results of an experimental study on charge carriers heating by an electric field $(\mathbf{E})$ in pure Ge in a quantum magnetic field $(\mathbf{H})$ at ($\mathbf{E}\perp\mathbf{H}$) at low temperatures ($T$ = 4,2;1,8 K) under thermal excitation are considered. It is shown that the dependence of $E$ and $H$ thermal ionization coefficient affects the average carrier lifetime under these conditions. The obtained results are in qualitative agreement with the theory of cascade capture of carriers on isolated centers in crossed electric and magnetic fields.

Keywords: quantization, cascade capture, electric field, Hall constant, magnetic field.

Received: 08.10.2019
Revised: 15.10.2019
Accepted: 15.10.2019

DOI: 10.21883/FTP.2020.03.49021.9282

 English version: Semiconductors, 2020, 54:3, 275–277

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