This article is cited in 4 papers

Manufacturing, processing, testing of materials and structures

Features of SiO$_2$ layers synthesized on silicon by molecular layer deposition

A. P. Baraban^a, E. A. Denisov^a, V. A. Dmitriev^a, A. V. Drozd^a, V. E. Drozd^a, A. A. Selivanov^a, R. Seisyan<sup>b

a</sup> Saint Petersburg State University
^b Ioffe Institute, St. Petersburg

Abstract: The characteristics of silicon-oxide layers deposited by various technological methods are compared. It is shown that the catalytic method for obtaining silicon-oxide layers by molecular layering has a number of advantages. The main advantages are a low growth temperature, high-quality interface with a silicon substrate, and high growth rate of films. Studies by cathodoluminescence made it possible to evaluate the structural quality of silicon-oxide layers produced by molecular layering and confirmed the potential of this method in obtaining high-quality silicon-oxide films for broad practical application.

Keywords: molecular layering, low-temperature synthesis, silicon oxide, catalytic synthesis, cathodoluminescence, spectral distribution.

Received: 12.11.2019
Revised: 18.11.2019
Accepted: 18.11.2019

DOI: 10.21883/FTP.2020.04.49153.9312

 English version: Semiconductors, 2020, 54:4, 506–510

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