This article is cited in 2 papers

Electronic properties of semiconductors

Temperature-dependent total absorption of exciton polaritons in bulk semiconductors

R. Seisyan, S. A. Vaganov

Ioffe Institute, St. Petersburg

Abstract: This paper highlights the temperature factor in the experimental study of total absorption as a method for experimental validation and the study of the exciton–polariton light transfer mechanism near the fundamental absorption edge in semiconductor crystals with spatial dispersion. The results of experimental studies of temperature-dependent total exciton absorption are generalized. The experimentally determined critical temperatures above which total absorption becomes constant, the corresponding critical damping parameter, and longitudinal–transverse splittings for the studied semiconductors CdTe, GaAs, InP, ZnSe, and ZnTe are presented.

Keywords: exciton absorption, total absorption, temperature-dependent absorption, exciton polariton, semiconductor crystals.

Received: 22.10.2019
Revised: 28.11.2019
Accepted: 02.12.2019

DOI: 10.21883/FTP.2020.04.49135.9293

 English version: Semiconductors, 2020, 54:4, 399–402

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