This article is cited in 1 paper

Amorphous, glassy, organic semiconductors

Polarization processes in thin layers of amorphous MoS$_2$ obtained by RF magnetron sputtering

A. A. Kononov^a, R. A. Castro Arata^a, D. D. Glavnaya^a, V. M. Stozharov^a, D. M. Dolginsev^a, Yu. Saito^b, P. Fons^b, N. I. Anisimova^a, A. V. Kolobov<sup>ab

a</sup> Herzen State Pedagogical University of Russia, St. Petersburg
^b National Institute of Advanced Industrial Science and Technology, Tsukuba Central 5, 1-1-1 Higashi, 305-8565, Tsukuba, Ibaraki, Japan

Abstract: The polarization processes in thin layers of amorphous molybdenum disulfide MoS$_2$ are studied by dielectric spectroscopy techniques. The process of dipole-relaxation polarization is observed. The microscopic parameters of the system are calculated, and the relaxation time of the dipole-polarization process, as well as the activation energies $E_a$ and $E_\sigma$ of the relaxation process and conductivity, respectively, are determined. The fact that the two activation energies are close to each other suggests that the processes of relaxation and charge transport are driven by the same mechanism.

Keywords: molybdenum disulfide, transition-metal dichalcogenides, transport processes.

Received: 13.01.2020
Revised: 17.01.2020
Accepted: 17.01.2020

DOI: 10.21883/FTP.2020.05.49262.9345

 English version: Semiconductors, 2020, 54:5, 558–562

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