This article is cited in 19 papers

Reviews

Modification of the atomic and electronic structure of III–V semiconductor surfaces at interfaces with electrolyte solutions (Review)

M. V. Lebedev

Ioffe Institute, St. Petersburg

Abstract: Recent experimental and theoretical results on modification of the surface atomic and electronic structure of various III–V semiconductor with electrolyte solutions are reviewed. The relationship between the chemical and charge transfer processes that proceed at the semiconductor/electrolyte interfaces and accompanying modification of the semiconductor surface atomic and electronic structure is revealed. Advances in the application of electrolyte solutions for modification of the semiconductor nanostructures and device performance are discussed.

Keywords: III–V semiconductors, surface, surface modification, surface passivation, electronic structure, semiconductor/electrolyte interface.

Received: 05.03.2020
Revised: 09.03.2020
Accepted: 09.03.2020

DOI: 10.21883/FTP.2020.07.49502.9390

 English version: Semiconductors, 2020, 54:7, 699–741

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