This article is cited in 3 papers

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Enhancement of the luminescence signal from self-assembled Ge(Si) nanoislands due to interaction with the modes of two-dimensional photonic crystals

D. V. Yurasov^a, A. V. Novikov^ab, S. A. Dyakov^c, M. V. Stepikhova^a, A. N. Yablonskii^a, S. M. Sergeev^a, D. E. Utkin^d, Z. F. Krasil'nik<sup>a

a</sup> Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod
^c Skolkovo Institute of Science and Technology, Moscow, Russia
^d Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The results of studies of the luminescence properties of two-dimensional photonic crystals formed on the basis of silicon structures with self-assembled Ge(Si) nanoislands are reported. The possibilities of substantially enhancing the luminescence response of the active medium (Ge(Si) nanoislands) in the wavelength range 1.2–1.6 $\mu$m are shown for such structures. The specific features of the luminescence response of a photonic crystal in the vicinity of the $\Gamma$ point of its Brillouin zone are studied. It is shown that, along with the broadband response characteristic of the radiative modes of photonic crystals, high-$Q$ resonances, for which the $Q$ factor exceeds 10$^3$, can also be observed in such structures. The last-mentioned resonances are observed in a certain range of lattice parameters of photonic crystals.

Keywords: Ge(Si) quantum dots, photonic crystals, photonic crystal modes, photoluminescence.

Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020

DOI: 10.21883/FTP.2020.08.49633.10

 English version: Semiconductors, 2020, 54:8, 975–981

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