This article is cited in 1 paper

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Frequency tuning of terahertz stimulated emission under the intracenter optical excitation of uniaxially stressed Si:Bi

R. Kh. Zhukavin^a, K. A. Kovalevsky^a, S. G. Pavlov^b, N. Deßmann^c, A. Pohl^d, V. V. Tsyplenkov^a, N. V. Abrosimov^e, H. Riemann^e, H.-W. Hübers^bd, V. N. Shastin<sup>a

a</sup> Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Institute of Optical Sensor Systems, German Aerospace Center, Berlin, Germany
^c Radboud University Nijmegen, FELIX Laboratory, 6525 ED Nijmegen, The Netherlands
^d Department of Physics, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
^e Leibniz-Institut für Kristallzüchtung (IKZ), 12489 Berlin, Germany

Abstract: The results of experimental and theoretical investigations dedicated to the uniaxial stress induced tuning of terahertz stimulated terahertz emission from silicon doped with bismuth under optical intracenter excitation. The frequency tuning of two emission lines from bismuth donor in silicon under uniaxial stress along [001] has been demonstrated in the experiments. The crosssections of stimulated Raman scattering for uniaxially stressed silicon doped with bismuth donors have been calculated.

Keywords: silicon, uniaxial stress, inversion, terahertz stimulated emission, stimulated Raman scattering.

Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020

DOI: 10.21883/FTP.2020.08.49632.09

 English version: Semiconductors, 2020, 54:8, 969–974

Bibliographic databases:

•