This article is cited in 1 paper

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

On heating and relaxation of the electron–hole-gas energy in the track of a primary recoil atom

A. S. Puzanov^a, S. V. Obolensky^ab, V. A. Kozlov<sup>c

a</sup> National Research Lobachevsky State University of Nizhny Novgorod
^b Branch of the Russian Federal Nuclear Center All-Russian Research Institute of Experimental Physics, "Sedakov Scientific Research Institute of Measurement Systems", Nizhny Novgorod, Russia
^c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: On the basis of the Monte Carlo algorithm, a method for calculating the energy spectrum of hot nonequilibrium electrons and holes in the track of a primary recoil atom after being exposed to single fast neutrons is developed. The heating and subsequent relaxation of nonequilibrium charge carriers in silicon in the track of a charged particle with initial energies in the range of 50–200 keV are calculated. The characteristic temperatures of the electron and hole plasma are obtained, which amount to 5400 and 2700 K, respectively. The effect of the radiation-induced heating of charge carriers on the failure stability of static memory cells is discussed.

Keywords: primary recoil atom, single event upset, hot carriers.

Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020

DOI: 10.21883/FTP.2020.08.49627.03

 English version: Semiconductors, 2020, 54:8, 946–950

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