XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Impact of the potential of scattering at radiation-induced defects on carrier transport in GaAs structures

I. Yu. Zabavichev^ab, A. S. Puzanov^ab, S. V. Obolensky^ab, V. A. Kozlov<sup>c

a</sup> Lobachevsky State University of Nizhny Novgorod
^b Sedakov Research Institute of Measuring Systems, Branch of the Federal Nuclear All-Russian Research Institute of Experimental Physics, 603950, Nizhny Novgorod, Russia
^c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The change in the carrier mobility in GaAs structures after irradiation is numerically simulated. For each investigated scattering potential, the model parameters are determined at which the calculation data are consistent with the results of the experiment. It is shown for the first time that the form of the potential of scattering at radiation-induced defects determines the time and space dynamics of the velocity overshoot in short structures.

Keywords: Monte-Carlo method, radiation defect cluster, overshoot velocity effect.

Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020

DOI: 10.21883/FTP.2020.09.49837.31

 English version: Semiconductors, 2020, 54:9, 1134–1140

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