XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Influence of uniaxial stress along [110] direction on relaxation of arsenic shallow donor states in germanium

V. V. Tsyplenkov, V. N. Shastin

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: Analysis of acoustical phonon assisted relaxation rates of arsenic donor states has been carried out in depends on uniaxial compressive stress of crystal along [110] direction under low temperature ($<$ 10 K). As shown, under optical excitation the inversion population of donor energy levels is formed that depends on deformation of crystal. This give grounds to suppose that stimulated emission on arsenic shallow donor intracenter transitions in THz range is possible under optical excitation. As shown, uniaxial stress along [110] direction can result to switch laser transition and stimulated emission frequency.

Keywords: germanium, shallow donors, relaxation, emission of phonons.

Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020

DOI: 10.21883/FTP.2020.09.49832.24

 English version: Semiconductors, 2020, 54:9, 1108–1111

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