This article is cited in 2 papers

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Terahertz dispersion and amplification under electron streaming in graphene at 300 K

A. A. Andronov, V. I. Pozdnyakova

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: We interpret the recent observations of Otsuji's team (Sendai) on switching from absorption to amplification at a temperature of $T$ = 300 K during the passage of terahertz radiation through hexagonal boron nitride–graphene sandwiches with multiple gates on the surface with an increase in the electric field in graphene. It is shown that these effects are related to dispersion and negative conductivity near the transit-time frequency of electrons in momentum space under streaming (anisotropic distribution) in graphene in a strong electric field. On the basis of these data, a universal tunable terahertz source is proposed, which has the form of a graphene-containing sandwich with a high-resistance silicon wafer (a cavity) with an applied voltage. This terahertz cavity is a complete analog of the microwave generator implemented on an InP chip by Vorobev's team (St. Petersburg).

Keywords: THz radiation, graphene, electron streaming, negative conductivity.

Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020

DOI: 10.21883/FTP.2020.09.49827.19

 English version: Semiconductors, 2020, 54:9, 1078–1085

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