This article is cited in 1 paper

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Modification of the ratio between $sp^2/sp^3$-hybridized carbon components in PECVD diamond-like films

P. A. Yunin^a, A. I. Okhapkin^a, M. N. Drozdov^a, S. A. Korolev^a, E. A. Arkhipova^a, S. A. Kraev^a, Yu. N. Drozdov^a, V. I. Shashkin^a, D. B. Radishev<sup>b

a</sup> Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod

Abstract: It is known that diamond-like carbon layers consist of carbon components with $sp^2$ (graphite) and $sp^3$ (diamond) hybridizations of electron orbitals. The quantitative ratio between $sp^2$ and $sp^3$ components has a profound effect on the structural, morphological, optical, electrical, and mechanical properties of the films. In this study, the possibility of controlling the fractions of $sp^2$- and $sp^3$-hybridized carbon in diamond-like films produced by plasma-enhanced chemical-vapor deposition onto single-crystal silicon and diamond substrates is analyzed. In-situ methods of controlling the fraction of the $sp^3$ component by varying the power of the capacitive and inductively coupled discharges directly during production of the film and ex-situ methods, in which use is made of thermal annealing and the application of an electric field, are demonstrated.

Keywords: diamond-like carbon, plasma-enhanced chemical-vapor deposition, single-crystal diamond, thermal annealing.

Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020

DOI: 10.21883/FTP.2020.09.49820.12

 English version: Semiconductors, 2020, 54:9, 1047–1050

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