This article is cited in 3 papers

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Kinetics of the luminescence response of self-assembled Ge(Si) nanoislands embedded in two-dimensional photonic crystals

A. N. Yablonskii, A. V. Novikov, M. V. Stepikhova, S. M. Sergeev, N. A. Baidakova, M. V. Shaleev, Z. F. Krasil'nik

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The results of studies of the spectral and kinetic characteristics of the photoluminescence of photonic crystals formed on the basis of structures with self-assembled Ge(Si) nanoislands are reported. The experimentally observed enhancement of the photoluminescence-signal intensity of the nanoislands in the spectral range 1.1–1.6 $\mu$m due to interaction with the radiative modes of photonic crystals in the vicinity of the $\Gamma$ point of the Brillouin zone and the effect of such interaction on the probability of radiative recombination in Ge(Si) nanoislands are considered.

Keywords: Ge(Si) nanoislands, photonic crystals, photoluminescence, photoluminescence kinetics, Purcell's effect.

Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020

DOI: 10.21883/FTP.2020.10.49960.42

 English version: Semiconductors, 2020, 54:10, 1352–1359

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