A. E. Klimov, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, D. V. Gorshkov, D. V. Ishchenko, E. V. Matyushenko, I. G. Neizvestnyi, G. Yu. Sidorov, S. P. Suprun, A. S. Tarasov, O. E. Tereshchenko, V. S. Epov, “Features of MIS structures based on insulating PbSnTe:In films with the composition in the vicinity of the band inversion related to their ferroelectric properties”, Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 10,Pages <nobr>1122

This article is cited in 1 paper

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Features of MIS structures based on insulating PbSnTe:In films with the composition in the vicinity of the band inversion related to their ferroelectric properties

A. E. Klimov^ab, A. N. Akimov^a, I. O. Akhundov^a, V. A. Golyashov^ac, D. V. Gorshkov^a, D. V. Ishchenko^a, E. V. Matyushenko^a, I. G. Neizvestnyi^ab, G. Yu. Sidorov^a, S. P. Suprun^a, A. S. Tarasov^a, O. E. Tereshchenko^ac, V. S. Epov^a

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State Technical University
^c Novosibirsk State University

Abstract: The characteristics of MIS structures based on insulating PbSnTe:In films with compositions in the vicinity of a band inversion grown by molecular beam epitaxy (MBE) were studied. It has been shown that a number of their features can be caused by a ferroelectric phase transition with a Curie temperature in the range T $\approx$ 15–20 K.

Keywords: solid solution PbSnTe:In, field effect, MIS structure, ferroelectric phase transition.

Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020

DOI: 10.21883/FTP.2020.10.49955.29