XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Crystalline-phase switching in heterostructured Ga(AsP) nanowires under the impact of elastic strains

N. V. Sibirev^a, Yu. S. Berdnikov^b, V. N. Sibirev<sup>c

a</sup> St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^b Saint Petersburg State University
^c Saint-Petersburg State Mining Institute

Abstract: In this work, the influence of elastic strain on Ga(As,P) nanowire crystal structure was studied. The stable growth of nanowire in the metastable phase is explained by accounting the elastic strain in the nucleus of newly-forming nanowire layer. Within this approach, the crystal phase switching in GaP nanowire after Ga(AsP) insertion is explained.

Keywords: crystalline nanowires, polytypism, gallium phosphide, wurtzite.

Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020

DOI: 10.21883/FTP.2020.10.49954.28

 English version: Semiconductors, 2020, 54:10, 1320–1324

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