This article is cited in 3 papers

Electronic properties of semiconductors

Features of the electrical-conductivity mechanism in $\gamma$-irradiated TlInSe$_{2}$ single crystals under hydrostatic pressure

R. S. Madatov^ab, Sh. G. Gasimov^c, S. S. Babaev^c, A. S. Alekperov^d, I. M. Movsumova^e, S. H. Jabarov<sup>ad

a</sup> Institute of radiation problems, ANAS
^b Национальная авиационная академия, Az-1045 Баку, Азербайджан
^c Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
^d Azerbaijan State Pedagogical University, Baku, Azerbaijan
^e Ganja State University

Abstract: The effect of hydrostatic pressure to 10 kbar on the conductivity of $\gamma$-irradiated chain TlInSe$_2$ single crystals with a resistivity of $\sim$10$^8$ $\Omega$ cm is studied. It is found that the observed conductivity anomalies of TlInSe$_2$ samples irradiated at doses of $D<$ 100 krad and $D>$ 100 krad are associated with the ordered transformation of defects including interstitial cations and anions. The nature of the anomalous change and pressure dependences of the resistivity $\sigma(P)$ in the irradiated samples suggest that pressure causes local energy levels due to macroscopic clusters of radiation-induced defects, with the result that the Fermi-level energy and carrier concentration change.

Keywords: hydrostatic pressure, electrical conductivity, chain single crystals, $\gamma$-irradiation, radiation-induced defects, baric dependence.

Received: 15.05.2020
Revised: 01.06.2020
Accepted: 15.06.2020

DOI: 10.21883/FTP.2020.10.49933.9439

 English version: Semiconductors, 2020, 54:10, 1180–1184

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