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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2020 Volume 54, Issue 10, Pages 987–996 (Mi phts5129)

This article is cited in 1 paper

Electronic properties of semiconductors

Effect of a nickel impurity on the galvanomagnetic properties and electronic structure of PbTe

E. P. Skipetrova, B. B. Kovaleva, I. V. Shevchenkoa, A. V. Knotkobc, V. E. Slynkod

a Faculty of Physics, Lomonosov Moscow State University
b Lomonosov Moscow State University, Faculty of Materials Science
c Lomonosov Moscow State University, Faculty of Chemistry
d Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, Chernivtsi, Ukraine

Abstract: The phase and elemental composition and galvanomagnetic properties (4.2 $\le T\le$ 300 K, B $\le$ 7 T) of Pb$_{1-y}$Ni$_{y}$Te alloys are studied at a variation of the nickel impurity concentration along the single-crystal ingot synthesized by the Bridgman–Stockbarger technique. It is shown that the solubility of nickel does not exceed 0.35 mol.%. Anomalous temperature dependences of the Hall coefficient and temperature and field dependences of magnetoresistance are found. To explain the results, it is assumed that an $n$-type inversion layer appears on the surface of the samples and that there are several competing conduction mechanisms in the samples. A model of the Pb$_{1-y}$Ni$_{y}$Te electronic structure is proposed that assumes pinning of the Fermi level within the Ni impurity band, located at the edge of the valence band and moving deeper into it with increasing temperature.

Keywords: Pb$_{1-y}$Ni$_{y}$Te alloys, galvanomagnetic effects, electronic structure, impurity band of nickel.

Received: 15.04.2020
Revised: 20.04.2020
Accepted: 27.04.2020

DOI: 10.21883/FTP.2020.10.49932.9417


 English version:
Semiconductors, 2020, 54:10, 1171–1179

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