RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2020 Volume 54, Issue 11, Pages 1238–1243 (Mi phts5126)

This article is cited in 1 paper

Semiconductor physics

Influence of the surface morphology of the microwave microstrip line on its transmission performance

N. A. Torkhovabcd, A. A. Kokolovbe, L. I. Babakb

a Scientific-Research Institute of Semiconductor Devices, Tomsk
b Tomsk State University of Control Systems and Radioelectronics
c Tomsk State University
d Sevastopol State University
e Institute of Atmospheric Optics, Siberian Branch of the Russian Academy of Science, Tomsk

Abstract: The main morphological parameters of 50-ohm Au/$i$-GaAs$\{100\}$ thin-film microwave microstrip gold coplanar transmission lines of the length lW affecting the active resistance of their skin layer $R$ and inductance $L$ are determined. It is found that the lateral character of the grain distribution and developed relief of their surfaces causes the appearance of additional electron scattering both at grain boundaries and at relief inhomogeneities. The small grain size $d_x<$ 133 nm at frequencies of $f>$ 10 GHz transforms an abnormal skin-effect into the normal one. Herewith, the linear dependence of $R$ on $l_W$ in the local approximation is provided by the fractal geometry of the surface relief and near-surface region of coplanar transmission lines, while the nonlinear dependence of the inductance $L$ on $l_W$ is provided not only by the fractal relief features of the two-dimensional surface of coplanar transmission lines but also by the fractal features of the three-dimensional distribution of its grains.

Keywords: microwave lines,skin effect, surface morphology, fractals, Hausdorff–Bezikovich dimensionality, $S$ parameters of scattering, compact model, parameter extraction.

Received: 26.04.2020
Revised: 18.05.2020
Accepted: 28.05.2020

DOI: 10.21883/FTP.2020.11.50095.9416


 English version:
Semiconductors, 2020, 54:11, 1472–1477

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2026