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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2020 Volume 54, Issue 12, Pages 1355–1363 (Mi phts5111)

This article is cited in 2 papers

Carbon systems

Carbon nanotube nanomesh films with X-shaped junctions for electronic and photovoltaic applications

O. E. Glukhova, M. M. Slepchenkov, K. R. Asanov

Saratov State University

Abstract: The atomic structure, electronic and optoelectronic properties of nanosized films of carbon nanotubes with seamless cross-shaped X- junctions are studied. It is established that the topology of the arrangement of non-hexagonal elements in the contact region of nanotubes determines the energy stability of the atomic structure. It is revealed that the pore size of the film determines the type of conductivity. At the smallest pore sizes, the film is characterized by a metallic type of conductivity; with an increase in pore size, the gap in the band structure also increases and the film becomes semiconductor. Films with a minimum gap size exhibit good photovoltaic properties. The photocurrent for the considered film models can reach 2.4 mA cm$^{-2}$ in the atmosphere and 3.25 mA cm$^{-2}$ outside the atmosphere. The presence of a gap in the band structure makes nanosized films promising for nanoelectronics and optoelectronics.

Keywords: nanomeshes, carbon nanotubes, absorption spectrum, electrical conductivity, photocurrent.

Received: 17.02.2020
Revised: 03.08.2020
Accepted: 10.08.2020

DOI: 10.21883/FTP.2020.12.50237.9372


 English version:
Semiconductors, 2020, 54:12, 1616–1623

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© Steklov Math. Inst. of RAS, 2026