I. V. Bondar', A. A. Feshchenko, V. V. Khoroshko, “Band gap of (In$_{2}$S$_3$)$_{x}$(AgIn$_{5}$S$_8$)$_{1-x}$ single-crystal alloys”, Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 12,Pages 1350

This article is cited in 3 papers

Micro- and nanocrystalline, porous, composite semiconductors

Band gap of (In$_{2}$S$_3$)$_{x}$(AgIn$_{5}$S$_8$)$_{1-x}$ single-crystal alloys

I. V. Bondar', A. A. Feshchenko, V. V. Khoroshko

Belarussian State University of Computer Science and Radioelectronic Engineering

Abstract: In$_{2}$S$_{3}$, AgIn$_{5}$S$_{8}$, and (In$_{2}$S$_3$)$_{x}$(AgIn$_{5}$S$_8$)$_{1-x}$-alloy single crystals are grown by the Bridgman method. The composition and structure of the crystals are determined. It is established that both the initial compounds and their alloys crystalize with the formation of the cubic spinel structure. The unit-cell parameters of the single crystals are calculated, and the dependences of these parameters on the alloy composition are constructed. It is shown that, in the system, Vegard's law is satisfied. The transmittance spectra of the crystals in the region of the fundamental absorption edge are studied at room temperature, and the band gap $(E_g)$ is determined. It is shown that $E_g$ varies with the composition parameter $x$, with some deviation from a linear dependence.

Keywords: single crystals, crystal structure, alloys, transmittance spectra, band gap.

Received: 10.08.2020
Revised: 15.08.2020
Accepted: 15.08.2020

DOI: 10.21883/FTP.2020.12.50236.9500