This article is cited in 18 papers

Non-electronic properties of semiconductors (atomic structure, diffusion)

Structure of germanium monoxide thin films

K. N. Astankova^a, V. A. Volodin^ab, I. A. Azarov<sup>ab

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University

Abstract: By means of optical (Raman spectroscopy, IR spectroscopy, X-ray photoelectron spectroscopy) and electron microscopic methods, it was found that the atomic structure of stoichiometric germanium monoxide films corresponds to the random bonding model, without the formation of germanium nanoclusters. This structure is metastable and transforms into a structure which is close to random mixture model at a temperature 260$^\circ$C and higher. The metastability of solid GeO may be related to the presence of internal mechanical stresses in the atomic network.

Keywords: germanium monoxide, metastability, random bonding model.

Received: 24.08.2020
Revised: 28.08.2020
Accepted: 28.08.2020

DOI: 10.21883/FTP.2020.12.50228.9508a

 English version: Semiconductors, 2020, 54:12, 1555–1560

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