S. V. Bulyarskii, A. V. Lakalin, M. A. Saurov, “Effect of electron–phonon interaction and <nobr>$\gamma$</nobr>-ray irradiation on the reverse currents of silicon photodiodes”, Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 1,Pages <nobr>69

This article is cited in 1 paper

Semiconductor physics

Effect of electron–phonon interaction and $\gamma$-ray irradiation on the reverse currents of silicon photodiodes

S. V. Bulyarskii^a, A. V. Lakalin^a, M. A. Saurov^b

^a Institute of Nanotechnologies of Microelectronics, Russian Academy of Sciences, Moscow, Russia
^b National Research University of Electronic Technology, Zelenograd, Russia

Abstract: The current–voltage characteristics of silicon photodiodes before and after irradiation by $\gamma$-quanta with an energy of 1.25 MeV and an irradiation dose of 0.5 mrad are investigated. It is established that the reverse currents are determined by the Poole–Frenkel mechanism in a strong electric field with the influence of electron–phonon interaction. A procedure is developed and the parameters of the electron–phonon interaction described by the single-coordinate configuration model are calculated from the reverse current–voltage characteristics. It is assumed that divacancy-oxygen centers in silicon, which determine the reverse photodiode currents, are formed due to $\gamma$-ray irradiation.

Keywords: reverse current–voltage characteristic, Poole–Frenkel effect, electron–phonon interaction, $\gamma$-ray irradiation, divacancy-oxygen center in silicon.

Received: 03.06.2020
Revised: 03.08.2020
Accepted: 25.08.2020

DOI: 10.21883/FTP.2021.01.50389.9455