This article is cited in 3 papers

Micro- and nanocrystalline, porous, composite semiconductors

Structural and optical-phonon properties of InSb nanocrystals synthesized in Si and SiO$_2$ matrices

I. E. Tyschenko^a, R. Zhang<sup>b

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia
^b Novosibirsk State University, Novosibirsk, Russia

Abstract: Interest in creating and studying silicon-based InSb nanocrystals is due to the need for hybrid integrated circuits involving elements with different functional properties. Optical phonons localized in low-dimension crystals can affect both the optical and electrical properties of these crystals. The optical-phonon properties of InSb nanocrystals ion-beam synthesized in silicon and InSb nanocrystals formed in SiO$_2$ layers by ion-beam synthesis and rf magnetron sputtering are compared. The properties of optical phonons in InSb nanocrystals are explained in terms of the effect of the structural properties of the surrounding matrix.

Keywords: InSb, silicon, silicon oxide, nanocrystals, synthesis.

Received: 04.06.2020
Revised: 07.09.2020
Accepted: 18.09.2020

DOI: 10.21883/FTP.2021.01.50388.9464

 English version: Semiconductors, 2021, 55:1, 76–85

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