A. L. Vikharev, S. A. Bogdanov, N. M. Ovechkin, O. A. Ivanov, D. B. Radishev, A. M. Gorbachev, M. A. Lobaev, A. Ya. Vul', A. T. Dideikin, S. A. Kraev, S. A. Korolev, “Study of undoped nanocrystalline diamond films grown by microwave plasma-assisted chemical vapor deposition”, Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 1,Pages <nobr>49

This article is cited in 4 papers

Micro- and nanocrystalline, porous, composite semiconductors

Study of undoped nanocrystalline diamond films grown by microwave plasma-assisted chemical vapor deposition

A. L. Vikharev^a, S. A. Bogdanov^a, N. M. Ovechkin^a, O. A. Ivanov^a, D. B. Radishev^a, A. M. Gorbachev^a, M. A. Lobaev^a, A. Ya. Vul'^b, A. T. Dideikin^b, S. A. Kraev^a, S. A. Korolev^a

^a Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod, Russia
^b Ioffe Institute, St. Petersburg, Russia

Abstract: Undoped nanocrystalline diamond (NCD) films less than 1 $\mu$m thick grown on Si (100) silicon by microwave plasma-assisted chemical vapor deposition at a frequency of 2.45 GHz are studied. To obtain diamond dielectric films with maximum resistivity the deposition of films in three gas mixtures is investigated: hydrogen-methane mixture, hydrogen-methane mixture with the addition of oxygen and hydrogen-methane mixture with the addition of an inert gas. A relationship has been established between the growth conditions, structural and electrical properties of NCD films. It is shown that for the use of NCD films as effective dielectrics preliminary high-temperature annealing of the films is required, for example, in vacuum at a temperature of 600$^{\circ}$C for one hour.

Keywords: nanocrystalline diamond, thin diamond films, electrical properties of films.

Received: 03.09.2020
Revised: 10.09.2020
Accepted: 10.09.2020

DOI: 10.21883/FTP.2021.01.50387.9520