Abstract:
The effect of the intensity of ionizing radiation on the volume charge and surface-state density of metal–oxide–semiconductor (MOS) structures with thin gate silicon dioxide is modeled. It is shown that the dependences of the surface-state density and volume charge on the total time of ionizing radiation and subsequent annealing at different ionizing-radiation intensities lie on the corresponding common curves $N_ {it}(t)$ and $Q_{ot}(t)$. The $N_ {it}(t)$ common curve is determined by the dispersive nature of the transport of hydrogen ions Í$^+$. The observed deviations from this $N_ {it}(t)$ common curve immediately after the end of ionizing irradiation are due to the transient process of the redistribution of Í$^+$ ions. The $Q_ {ot}(t)$ common curve is determined by relaxation of the volume charge from a system of levels with energies of 0.3 to 1.0 eV by the mechanism of thermal emission. It is shown that the enhanced low-dose-rate sensitivity (ELDRS) for the MOS structures with a thick base oxide at low intensities is determined by the dispersive character of the transport of hydrogen ions Í$^+$.
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