This article is cited in 3 papers

Spectroscopy, interaction with radiation

Amplification lengths of spectral components of intrinsic stimulated picosecond emission. Dependence of the characteristic relaxation time of these components on their amplification lengths. Relation between stimulated and spontaneous emission spectra in GaAs

N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov

Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia

Abstract: The high-power picosecond optical pumping of a thin GaAs layer generates intense picosecond stimulated emission. The emission spectrum is a light continuum. Based on the results of previous experimental work, the following is carried out. (a) The amplification lengths of the emission spectral components, i.e., the different distances over which different emission components are amplified in the active medium produced by pumping and (b) the dependences of the characteristic relaxation time of emission components on their gain lengths are estimated. It is shown that the spectrum of the product of the gain length and the gain linearly relates the spectra of the spontaneous and stimulated emission of GaAs. This relation is established upon gain saturation which is evidenced by a dip in the gain spectrum, “burned out” by intense emission.

Keywords: stimulated picosecond emission, emission spectral components, amplification length, characteristic relaxation time, gain saturation, relation between stimulated and spontaneous emissions, gallium arsenide.

Received: 28.09.2020
Revised: 10.10.2020
Accepted: 10.10.2020

DOI: 10.21883/FTP.2021.02.50496.9526

 English version: Semiconductors, 2021, 55:2, 162–167

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