This article is cited in 1 paper

Electronic properties of semiconductors

Evolution of electron transport upon resistive switching in porphyrazine films

K. A. Drozdov^a, I. V. Krylov^a, V. A. Vasilik^a, A. D. Kosov^a, T. V. Dubinina^bc, L. I. Ryabova^b, D. R. Khokhlov<sup>ad

a</sup> Faculty of Physics, Lomonosov Moscow State University, Moscow, Russia
^b Lomonosov Moscow State University, Faculty of Chemistry, Moscow, Russia
^c Institute of Physiologically Active Compounds RAS, Chernogolovka, Russia
^d P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow, Russia

Abstract: Analysis of the current-voltage characteristics made it possible to determine the conductivity mechanisms corresponding to different stages of the formation of conducting filaments during resistive switching in porphyrazine films. Varying the temperature, the structure of the dielectric matrix, and the type of the majority charge carriers made it possible to assess the applicability of the model of conducting filaments to describe transport and to determine the mechanisms of conductivity for each state of the system.

Keywords: porphyrazine films, charge-carrier transport, resistive switching.

Received: 22.10.2020
Revised: 12.11.2020
Accepted: 12.11.2020

DOI: 10.21883/FTP.2021.03.50598.9540

 English version: Semiconductors, 2021, 55:3, 296–300

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