Amorphous, glassy, organic semiconductors

Charge transfer in thin layers of glassy Ge$_{28.5}$Pb$_{14.5}$Fe$_{0.5}$S$_{56.5}$

R. A. Kastro-Arata^a, G. I. Grabko^ab, A. A. Kononov^a, N. I. Anisimova^a, M. Krbal^c, A. V. Kolobov<sup>ad

a</sup> Herzen State Pedagogical University of Russia, St. Petersburg
^b Zabaikalsky State University, Chita
^c Университет Пардубице, 530 02 Пардубице, Чехия
^d National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan

Abstract: The results of investigation of charge transfer processes in thin layers of vitreous Ge$_{28.5}$Pb$_{14.5}$Fe$_{0.5}$S$_{56.5}$ are presented. The power-law dependence of specific conductivity on frequency and a decrease of the power exponent s value with increasing temperature were found. The charge transfer is a thermally ac- tivated process with the activation energy $E_a$ = (0.64 $\pm$ 0.02) eV. The results obtained are explained within the correlated barrier hopping model (CBH) of conductivity in disordered systems. The calculated concentration of lone-pair electrons L demonstrates that the material remains in the glass-forming region.

Keywords: hopping transfer mechanism, thin layers, glassy hybrid system, lone-pair electrons.

Received: 18.01.2021
Revised: 25.01.2021
Accepted: 25.01.2021

DOI: 10.21883/FTP.2021.05.50836.9578

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