D. V. Yurasov, N. A. Baidakova, V. A. Verbus, N. S. Gusev, E. E. Morozova, D. V. Shengurov, A. N. Yablonskii, A. V. Novikov, “Formation and optical properties of locally strained Ge microstructures embedded into cavities”, Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 5,Pages <nobr>420

Surface, interfaces, thin films

Formation and optical properties of locally strained Ge microstructures embedded into cavities

D. V. Yurasov^a, N. A. Baidakova^a, V. A. Verbus^ab, N. S. Gusev^a, E. E. Morozova^a, D. V. Shengurov^a, A. N. Yablonskii^a, A. V. Novikov^ac

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
^b State University – Higher School of Economics, Nizhny Novgorod Branch
^c Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, Russia

Abstract: The formation of locally strained Ge microstructures (microbridges) on silicon-on-insulator (SOI) substrates embedded into cavities and the results of studies of the optical properties of such structures are reported. A cavity design compatible with the geometry of the locally strained active region is calculated so that it provides, on the one hand, efficient localization of the electromagnetic field in the active region of the structure and, on the other hand, minimizes the influence of the cavity on the magnitude and distribution of strains in the structure. The experimentally obtained microphotoluminescence spectra demonstrate a considerable increase of the signal intensity from the strained regions of Ge microstructures compared to the initial Ge film. It is shown that the formation of cavities yields a reduction of strains in Ge microbridges, but provides an increase of the photoluminescence intensity of the structures.

Keywords: SiGe structures, tensile strained Ge, microcavity, photoluminescence, heatsink.

Received: 24.12.2020
Revised: 30.12.2020
Accepted: 30.12.2020

DOI: 10.21883/FTP.2021.05.50830.9584