This article is cited in 13 papers

Electronic properties of semiconductors

Effect of gamma irradiation on the thermal switching of a GeS : Nd single crystal

A. S. Alekperov^a, A. O. Dashdemirov^a, T. G. Naghiyev^b, S. H. Jabarov<sup>ab

a</sup> Azerbaijan State Pedagogical University
^b Azerbaijan State Economic University

Abstract: The effect of thermal switching of layered GeS : Nd single crystal is investigated in a wide range of temperature ($T$ = 80–350 K). Gamma irradiation effect at different doses (30 krad and 100 krad) on thermal switching of GeS : Nd single crystal was studied. It was found that the effect of thermal switching is not observed in the GeS : Nd crystal after gamma irradiation in low doses, with the formation of an ordered structure. The degradation is observed in the structure when gamma irradiation increased to 100 krad, resulting in the crystal loses its photosensitivity and thermal switching effect is not detected.

Keywords: single crystal, $\gamma$ irradiation, thermal switching, phase transition, low-resistance state, nanostructure, rare earth element.

Received: 17.03.2021
Revised: 22.03.2021
Accepted: 22.03.2021

DOI: 10.21883/FTP.2021.07.51011.9649

 English version: Semiconductors, 2021, 55:6, 574–577

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