Semiconductor physics

Suppression of the effect of quasi-saturation of current-voltage characteristics of power radio frequency lateral transistors

R. P. Alekseev^a, M. I. Chernykh^a, A. N. Tsotsorin^a, I. V. Semeykin^a, G. V. Bykadorova<sup>b

a</sup> Research Institute of Electronic Engineering, Voronezh
^b Voronezh State University

Abstract: Was been performed the analysis of electric parameters of a new generation of RF LDMOS transistors developed by JSC “NIIET”. In comparison with the devices of the previous generation was revealed a significant suppression of the effect of quasi-saturation of $I_D$–$U_G$ and $I_D$–$U_D$ characteristics. Comparison with a foreign-made device shows that the achieved results are close to the world level.

Keywords: power RF transistors, LDMOS, quasi-saturation of I–V characteristics.

Received: 05.04.2021
Revised: 12.04.2021
Accepted: 12.04.2021

DOI: 10.21883/FTP.2021.08.51141.9658

Bibliographic databases:

•