Electronic properties of semiconductors

Temperature dependence of the band gap of AgIn$_{8}$S$_{12.5}$ single crystals

I. V. Bondar'^a, A. A. Feshchenko^a, V. V. Khoroshko^a, V. N. Pavlovskii^b, I. E. Svitsiankou^b, G. P. Yablonskii<sup>a

a</sup> Belarussian State University of Computer Science and Radioelectronic Engineering, Minsk, Belarus
^b B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk

Abstract: AgIn$_{8}$S$_{12.5}$ single crystals were grown by the vertical Bridgman method. The composition of the single crystals was determined by the X-ray spectral analysis method, and the crystal structure was determined by the X-ray diffraction method. It is shown that the grown single crystals crystallized in the cubic spinel structure. Transmittance spectra in the temperature range 10–320 K were used to determine the band gap of the crystals, which increased with decreasing the temperature.

Keywords: Bridgman method, AgInS single crystals, crystal structure, transmittance spectra, band gap.

Received: 11.01.2021
Revised: 02.04.2021
Accepted: 16.04.2021

DOI: 10.21883/FTP.2021.08.51134.9599

Bibliographic databases:

•