A. S. Tarasov, N. N. Mikhailov, S. A. Dvoretskii, R. V. Menshchikov, I. N. Uzhakov, A. S. Kozhukhov, E. V. Fedosenko, O. E. Tereshchenko, “Preparation atomically clean and structurally ordered surfaces of epitaxial CdTe films for subsequent epitaxy”, Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 9,Pages <nobr>748

This article is cited in 6 papers

XXV International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 9-12, 2021

Preparation atomically clean and structurally ordered surfaces of epitaxial CdTe films for subsequent epitaxy

A. S. Tarasov^a, N. N. Mikhailov^ab, S. A. Dvoretskii^ac, R. V. Menshchikov^a, I. N. Uzhakov^a, A. S. Kozhukhov^a, E. V. Fedosenko^a, O. E. Tereshchenko^ab

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University
^c Tomsk State University

Abstract: An atomically clean and structurally ordered surface of the CdTe layer of a (013)-oriented GaAs/ZnTe/CdTe substrate after storage in air is obtained by treatment in isopropyl alcohol saturated with hydrochloric-acid vapors, with subsequent thermal annealing in ultrahigh vacuum. It is shown that chemical treatment of the CdTe surface results in the removal of native oxides and in enrichment of the surface with an elemental Te layer. During heating in vacuum, two stages of change in the state of the surface (at $\sim$ 125 and $\le$ 250$^\circ$C) are observed. At the temperature $T>$ 250$^\circ$C, elemental tellurium is desorbed, and a Te-stabilized (1$\times$1) CdTe(013) structure is formed.

Keywords: surface, GaAs substrate, HgCdTe, PbSnTe, XPS, RHEED, single wave ellipsometry, chemical preparation.

Received: 12.04.2021
Revised: 19.04.2021
Accepted: 19.04.2021

DOI: 10.21883/FTP.2021.09.51289.18