This article is cited in 5 papers

XXV International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 9-12, 2021

Substitution of phosphorus at the InP(001) surface upon annealing in an arsenic flux

D. V. Dmitriev^a, D. A. Kolosovsky^ab, E. V. Fedosenko^a, A. I. Toropov^a, K. S. Zhuravlev<sup>ab

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University

Abstract: Changes in the structure and elemental composition of the surface of the epitaxy-ready InP(001) substrate in an As flux in ultrahigh vacuum are studied in situ by the reflection high-energy electron diffraction (RHEED) technique. It is shown that, during annealing of the oxide layer at the surface, an InP$_{1-x}$As$_{x}$ layer is formed as a result of the substitution of phosphorus by arsenic. The dependence of the degree of substitution on the annealing temperature and time is established. The degree of the substitution of phosphorus by arsenic in the surface layer is 7% at the annealing temperature 480$^\circ$C and, reaches 41% at the temperature 540$^\circ$C. The annealing time influences the degree of substitution only slightly.

Keywords: indium phosphide, arsenic, annealing, substitution, diffraction.

Received: 12.04.2021
Revised: 19.04.2021
Accepted: 19.04.2021

DOI: 10.21883/FTP.2021.10.51437.36

 English version: Semiconductors, 2021, 55:11, 823–837