Semiconductor physics

InGaAsP/InP photovoltaic converters for narrowband radiation

N. S. Potapovich, M. V. Nakhimovich, V. P. Khvostikov

Ioffe Institute, St. Petersburg

Abstract: Utilizing performed research, photoelectric converters of narrow-band radiation ($\lambda\approx$ 1.0–1.3 $\mu$m) based on InGaAsP/InP heterostructures with an epitaxial $p$–$n$ junction have been developed and created. Technological regimes that apply of for creating high-quality layers of quaternary InGaAsP solid solutions isoperiodic to indium phosphide in a wide range of compositions by liquid-phase epitaxy have been determined.

Keywords: photovoltaic converters, narrowband radiation, InGaAsP, InP, LPE, heterostructures.

Received: 26.05.2021
Revised: 08.06.2021
Accepted: 08.06.2021

DOI: 10.21883/FTP.2021.11.51566.9688

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