This article is cited in 2 papers

XXV International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 9-12, 2021

Parameter-free model of self-catalyzed growth of Ga(As, P) nanowires

N. V. Sibirev^ab, Yu. S. Berdnikov^ac, V. V. Fedorov^b, I. V. Shtrom^ad, A. D. Bolshakov<sup>ab

a</sup> Saint Petersburg State University
^b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^c National Research University "Higher School of Economics", St. Petersburg Branch
^d Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg

Abstract: A precise model for calculating dependence of self-catalyzed Ga (As, P) nanowires composition on growth parameters without any fitting parameters is proposed. It is shown that the Ga(As, P) nanowires composition does not depend on the growth rate at a fixed ratio of group V and group III atoms total fluxes. The results of modeling are in good agreement with the experimentally observed dependence of the Ga(As, P) nanowires composition on the ratio of the fluxes of As and P atoms.

Keywords: Ga (As, P) nanowires, molecular beam epitaxy, quantitative calculation of composition.

Received: 12.04.2021
Revised: 19.04.2021
Accepted: 19.04.2021

DOI: 10.21883/FTP.2021.11.51548.44

 English version: Semiconductors, 2022, 56:1, 14–17

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