Ascending diffusion of impurity due to ion irradiation of heated silicon: numerical modeling

G. A. Kachurin, G. V. Gadiyak, V. I. Shatrov, I. E. Tyschenko

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Received: 28.05.1992
Accepted: 08.06.1992