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// Fizika i Tekhnika Poluprovodnikov
// Archive
Fizika i Tekhnika Poluprovodnikov,
1992
Volume 26,
Issue 8,
Pages
1427–1432
(Mi phts4768)
On the correlation mechanism of two-level recombination in
$\gamma, e$
-irradiated silicon
S. M. Dikman
Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
Received:
25.10.1991
Accepted:
04.03.1992
Fulltext:
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Steklov Math. Inst. of RAS
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