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Fizika i Tekhnika Poluprovodnikov, 1992 Volume 26, Issue 8, Pages 1427–1432 (Mi phts4768)

On the correlation mechanism of two-level recombination in $\gamma, e$-irradiated silicon

S. M. Dikman

Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region

Received: 25.10.1991
Accepted: 04.03.1992



© Steklov Math. Inst. of RAS, 2026