G. A. Kachurin, I. E. Tyschenko, A. E. Plotnikov, V. P. Popov, “Growth of monocrystalline $\alpha\text{-Si}_{3}\text{N}_{4}$ in buried layers produced by low-intensity implantation of N$^{+}$ ions into heated silicon”, Fizika i Tekhnika Poluprovodnikov, 1992, Volume 26, Issue 8,Pages 1390

Growth of monocrystalline $\alpha\text{-Si}_{3}\text{N}_{4}$ in buried layers produced by low-intensity implantation of N$^{+}$ ions into heated silicon

G. A. Kachurin, I. E. Tyschenko, A. E. Plotnikov, V. P. Popov

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Received: 25.10.1991
Accepted: 11.02.1992