Determination of photoionization cross-section for doping impurities in semiconductors using Hall-effect measurements

A. S. Vedeneev, A. G. Zhdan, V. V. Ryl'kov, A. G. Shafran

Institute of Radioengineering and Electronics of Russian Academy of Sciences, Fryazino Department

Received: 10.12.1991
Accepted: 30.01.1992