RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 1992 Volume 26, Issue 5, Pages 878–881 (Mi phts4681)

Low-temperature electric conductivity of silicon ionically implanted by phosphorus and antimony

V. V. Abramov, V. A. Kul'bachinskii, V. G. Kytin, A. B. Timofeev, A. G. Ul'yashin

Lomonosov Moscow State University

Received: 21.10.1991
Accepted: 26.12.1991



© Steklov Math. Inst. of RAS, 2026