Short Notes

Processes of radiation-induced defect formation in Si: Ge at 4.2, 78 and 300 K

V. G. Golubev, V. V. Emtsev, P. M. Klinger, G. I. Kropotov, Yu. V. Shmartsev

Ioffe Institute, St. Petersburg

Received: 18.10.1991
Accepted: 31.10.1991