Formation and properties of thermodonors under annealing below $550^{\circ}$C in silicon crystals grown by Chochralski method

V. M. Babich^a, N. P. Baran^a, Yu. P. Dotsenko^a, K. I. Zotov^a, V. B. Kovalchuk^a, V. M. Maksimenko

^a Institute of Semiconductor Physics NAS, Kiev

Received: 10.09.1991
Accepted: 22.10.1991