A. O. Konstantinov, “On the cause of origination of phosphorus diffusion profile near-surface plateau in silicon”, Fizika i Tekhnika Poluprovodnikov, 1992, Volume 26, Issue 2,Pages <nobr>339

JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 1992 Volume 26, Issue 2, Pages 339–351 (Mi phts4591)

On the cause of origination of phosphorus diffusion profile near-surface plateau in silicon

A. O. Konstantinov

Ioffe Institute, St. Petersburg

Received: 04.09.1991
Accepted: 05.09.1991

Fulltext: PDF file (1721 kB)