A. O. Konstantinov, “On the nature of point defects generated due to acceptor-impurity diffusion in silicon carbide”, Fizika i Tekhnika Poluprovodnikov, 1992, Volume 26, Issue 2,Pages <nobr>270

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Fizika i Tekhnika Poluprovodnikov, 1992 Volume 26, Issue 2, Pages 270–279 (Mi phts4582)

On the nature of point defects generated due to acceptor-impurity diffusion in silicon carbide

A. O. Konstantinov

Ioffe Institute, St. Petersburg

Received: 22.07.1991
Accepted: 24.07.1991

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