Deep Level Induced into GaAs by Doping with Sb Isovalent Impurity

V. Ya. Prinz, E. Kh. Khairi, V. A. Samoilov, Yu. B. Bolkhovityanov

Institute of Semiconductor Physics of USSR Academy of Sciences, Siberian Branch, Novosibirsk

UDC: 621.315.592

Received: 10.10.1985
Accepted: 20.12.1985