S. N. Gifeisman, V. P. Koropchanu, “Bound Exciton in Ionic Semiconductors with Degenerate Edge of the Valence Band”, Fizika i Tekhnika Poluprovodnikov, 1984, Volume 18, Issue 4,Pages <nobr>671

JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 1984 Volume 18, Issue 4, Pages 671–675 (Mi phts1702)

Bound Exciton in Ionic Semiconductors with Degenerate Edge of the Valence Band

S. N. Gifeisman, V. P. Koropchanu

V. I. Lenin Kishinev State University

UDC: 621.315.592

Received: 25.03.1983
Accepted: 22.11.1983