A. N. Kraichinskii, L. V. Muzrukhin, N. I. Ostashko, V. I. Shakhovtsov, “Efficiency of Defect Formation in <nobr>$n$</nobr>-Type Si under 1 MeV-Electron Irradiation”, Fizika i Tekhnika Poluprovodnikov, 1985, Volume 19, Issue 12,Pages <nobr>2202

JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 1985 Volume 19, Issue 12, Pages 2202–2204 (Mi phts1531)

Short Notes

Efficiency of Defect Formation in $n$-Type Si under 1 MeV-Electron Irradiation

A. N. Kraichinskii, L. V. Muzrukhin, N. I. Ostashko, V. I. Shakhovtsov

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